(4/5) based on 3 customer reviews
Description
Page 1. 145 Adams Avenue, Hauppauge, NY 11788 USA. Tel: (631) 435-1110 Fax: (631) 435-1824. Page 2. For the latest version of Central CP788X- 2N5087 . PNP - General Purpose Transistor Die. Die Size. 13.7 x 13.7 MILS. Die Thickness. 5.9 MILS. Base Bonding Pad Size. 4.0 x 4.0 MILS. Jul 21, 2000 2N4401ZL1. 2N4403. 2N4403RL. 2N4403RLRA. 2N4403RLRE. 2N4403RLRM. 2N4403RLRP. 2N4403ZL1. 2N4410. 2N5087 . 2N5087RLRA. 2N5087 : Low Noise PNP Bipolar Transistor, TO-92. For complete documentation, see the data sheet. This PNP Bipolar transistor is designed for high gain, low 2N5087 . 2N5087RLRA. LMMBA812M7LT1. LSMBT1005LT1. BCX71JLT1. BC857BDW1T1. BC858BDW1T1. BC857BWT1. BC858BWT1. BC857CDW1T1.
| Part Number | 2N5087 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - Bipolar (BJT) - Single |
| Brand | Samsung Semiconductor |
| Description | TRANS PNP 50V 0.05A TO-92 |
| Series | - |
| Packaging | Bulk |
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 50mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 250 @ 100µA, 5V |
| Power - Max | 625mW |
| Frequency - Transition | 40MHz |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Supplier Device Package | TO-92 |
| Image |  |
2N5087
SAMSUMG
10000
1.05
Hong Kong Capital Industrial Co.,Ltd
2N5087
SANSUMG
2662
1.4975
Belt (HK) Electronics Co
2N5087
SAMSUN
110
1.945
Antony Electronic Ltd.
2N5087
SANSUNG
141625
2.3925
Cicotex Electronics (HK) Limited
2N5087
SANGSUNG
55000
2.84
HK Future Electronic Company Limited
