Part Number | 2N5551 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single |
Brand | Samsung Semiconductor |
Description | TRANS NPN 160V 0.6A TO-92 |
Series | - |
Packaging | Bulk |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 600mA |
Voltage - Collector Emitter Breakdown (Max) | 160V |
Vce Saturation (Max) @ Ib, Ic | 200mV @ 5mA, 50mA |
Current - Collector Cutoff (Max) | 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
Power - Max | 625mW |
Frequency - Transition | 300MHz |
Operating Temperature | -65°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package | TO-92 |
Image |
2N5551
SAMSUMG
200
0.24
HK Hongkai Electronics Limited
2N5551
SANSUMG
10000
0.765
Shenzhen Chusinly Technology Co Ltd
2N5551
SAMSUN
5930
1.29
Hong Kong H.D.W Trading Co., Limited
2N5551
SANSUNG
5000
1.815
Z.H.T TECHNOLOGY HK LIMITED
2N5551
SANGSUNG
100000
2.34
SUNGLOW (HONGKONG) TECHNOLOGY LIMITED