(5/5) based on 14 customer reviews
Description
Dual N-Channel JFET. High Frequency Amplifier. 2N5911 / 2N5912 . FEATURES. Tight Tracking. Low Insertion Loss. Good Matching. ABSOLUTE MAXIMUM DESIGNER SUPPORT/SERVICES. Centrals applications engineering team is ready to discuss your design challenges. Just ask. Free quick ship samples ( 2nd MAXIMUM RATINGS: (TA=25 C unless otherwise noted). SYMBOL. UNITS. Collector-Base Voltage. VCBO. 100. V. Collector-Emitter Voltage. VCER. 80. V. MAXIMUM RATINGS: (TA=25 C). SYMBOL. UNITS. Collector-Base Voltage. VCBO. 60. V. Collector-Emitter Voltage. VCEO. 60. V. Emitter-Base Voltage. VEBO.
| Part Number | 2N5912 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - Bipolar (BJT) - Arrays |
| Brand | Samsung Semiconductor |
| Description | TRANSISTOR DUAL TO78 |
| Series | - |
| Packaging | Bulk |
| Transistor Type | - |
| Current - Collector (Ic) (Max) | - |
| Voltage - Collector Emitter Breakdown (Max) | - |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Power - Max | - |
| Frequency - Transition | - |
| Operating Temperature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-78-6 Metal Can |
| Supplier Device Package | TO-78-6 |
| Image |  |
2N5912
SAMSUMG
16000
1.86
Finestock Electronics HK Limited
2N5912
SANSUMG
2320
2.735
Agreat Technology (Hong Kong) Co., Limited
2N5912
SAMSUN
300
3.61
FLOWER GROUP(HK)CO.,LTD
2N5912
SANSUNG
2500
4.485
WIN AND WIN ELECTRONICS LIMITED
2N5912
SANGSUNG
50000
5.36
Yingxinyuan INT'L (Group) Limited
