Part Number | 2SD2150T100S |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single |
Brand | Samsung Semiconductor |
Description | TRANS NPN 20V 3A SOT-89 |
Series | - |
Packaging | |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 3A |
Voltage - Collector Emitter Breakdown (Max) | 20V |
Vce Saturation (Max) @ Ib, Ic | 500mV @ 100mA, 2A |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 270 @ 100mA, 2V |
Power - Max | 500mW |
Frequency - Transition | 290MHz |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-243AA |
Supplier Device Package | MPT3 |
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2SD2150T100S
SAMSUMG
5620
0.4
Ysx Tech Co., Limited
2SD2150T100S
SANSUMG
6309
1.2125
ONSTAR ELECTRONICS CO., LIMITED
2SD2150T100S
SAMSUN
6652
2.025
IC Chip Co., Ltd.
2SD2150T100S
SANSUNG
252
2.8375
Yingxinyuan INT'L (Group) Limited
2SD2150T100S
SANGSUNG
295
3.65
Cicotex Electronics (HK) Limited