Rated 
(5/5) based on 5 customer reviews
(5/5) based on 5 customer reviews
| Part Number | CSD23202W10 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Samsung Semiconductor |
| Description | MOSFET P-CH 12V 2.2A 4DSBGA |
| Series | NexFET |
| Packaging | |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 2.2A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 3.8nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 512pF @ 6V |
| Vgs (Max) | -6V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Rds On (Max) @ Id, Vgs | 53 mOhm @ 500mA, 4.5V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 4-DSBGA (1x1) |
| Package / Case | 4-UFBGA, DSBGA |
| Image |  |
Lowest Price: $0.88
Highest Price: $4.84
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CSD23202W10 Ref.
[hkinsamsungsemiconductor20220920][hkinbrandcloudAMpd]
