(5/5) based on 7 customer reviews
Description
Jan 13, 2017 FDC6333C . SSOT-6 (EutecticAuBW-G). FSCP. FSCP. 0.0172. 1. Terminal. Finish . Base Alloy. Green Status. Reflow Cycles. Max Time at. Temp. FDC6333C . ADR0. 1. SCL. 2. 3. SCD. 4. PWM_IN. VDD. BRITE_OUT. VSS2. EN_OUT. 16. 15. 14. 13. LX1801. VREF_IN. 5. V_BOT. 6. 7. ALS_IN. 8. VSS1. FDC6333C . Fairchild Semiconductor. None. R1, R13, R36, R76. 4. 0. RES, 0, 5% , 0.1 W, 0603. 0603. RC0603JR-070RL. Yageo America. R2, R11, R12. 3. FDC6333C . MOSFET N-. SSOT-6. 30V, 2.5A. 1. Fairchild. CH/P-CH. Semiconductor. D1. B1100-13-F. Schottky Diode. SMA. 100V, 1A. 1. Diodes Inc. D2, D3. 2200pF X7R 10% 50V. MURATA. GRM188R71H222KA01D. 1. Q1. PMOS 100V 3.8A. ZETEX. ZXMP10A18KTC. 1. Q2. CMOS 30V 2A. FAIRCHILD. FDC6333C .
| Part Number | FDC6333C |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Arrays |
| Brand | Samsung Semiconductor |
| Description | MOSFET N/P-CH 30V 2.5A/2A SSOT6 |
| Series | PowerTrench |
| Packaging | |
| FET Type | N and P-Channel |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 2.5A, 2A |
| Rds On (Max) @ Id, Vgs | 95 mOhm @ 2.5A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 6.6nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 282pF @ 15V |
| Power - Max | 700mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Supplier Device Package | SuperSOT,6 |
| Image |  |
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