Part Number | FPN660 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single |
Brand | Samsung Semiconductor |
Description | TRANS PNP 60V 3A TO-226 |
Series | - |
Packaging | Bulk |
Transistor Type | PNP |
Current - Collector (Ic) (Max) | 3A |
Voltage - Collector Emitter Breakdown (Max) | 60V |
Vce Saturation (Max) @ Ib, Ic | 450mV @ 200mA, 2A |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 500mA, 2V |
Power - Max | 1W |
Frequency - Transition | 75MHz |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 Long Body |
Supplier Device Package | TO-226 |
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FPN660
SAMSUMG
8000
0.03
MY Group (Asia) Limited
FPN660
SANSUMG
6252
0.995
Cicotex Electronics (HK) Limited
FPN660A
SAMSUN
8000
1.96
MY Group (Asia) Limited
FPN660A
SANSUNG
4857
2.925
Cicotex Electronics (HK) Limited
FPN660A
SANGSUNG
16565
3.89
Hongkong K.L.N Electronic Technology Co., Ltd.