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Description
Requester Item Number. Mfr Item Number. Mfr Item Name. Effective Date. FSC Version. Manufacturing Site. Weight*. UOM. Unit Type. FQA90N15 . FQA90N15 . Jan 13, 2017 FQA90N15 . TO3PN-3. FSSZ. FSSZ. 5.43465. NA. Terminal. Finish. Base Alloy. Green Status. Reflow Cycles. Max Time at. Temp. Peak. Temp. FQA90N15 : N-Channel QFET MOSFET 150V, 90A, 18m . For complete documentation, see the data sheet. This N-Channel enhancement mode power FQA90N15 . 150V. 0.018. 39nF. 8. 5600 F. 56nF. 0.0008. 0.0016. 120. FQA55N25. 250V. 0.04. 47nF. 6. 1500 F. 39nF. 0.001. 0.002. 240. FDL100N50F. 500V.
| Part Number | FQA90N15 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Samsung Semiconductor |
| Description | MOSFET N-CH 150V 90A TO-3P |
| Series | QFET |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 150V |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 285nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 8700pF @ 25V |
| Vgs (Max) | ±25V |
| FET Feature | - |
| Power Dissipation (Max) | 375W (Tc) |
| Rds On (Max) @ Id, Vgs | 18 mOhm @ 45A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-3PN |
| Package / Case | TO-3P-3, SC-65-3 |
| Image |  |
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