Part Number | IPP320N20N3 G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Samsung Semiconductor |
Description | MOSFET N-CH 200V 34A TO220-3 |
Series | OptiMOS |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 34A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 90µA |
Gate Charge (Qg) (Max) @ Vgs | 29nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2350pF @ 100V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 136W (Tc) |
Rds On (Max) @ Id, Vgs | 32 mOhm @ 34A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO-220-3 |
Package / Case | TO-220-3 |
Image |
Hot Offer
IPP320N20N3 G
SANGSUNG
15000
4.23
Hong Kong Borui Jintong Technology Co., Limited
IPP320N20N3 G
SAMSUMG
5000
0.75
Shenzhen Qiangneng Electronics Co., Ltd.
IPP320N20N3 G
SANSUMG
2500
1.62
ANT NEST ELECTRONIC CO., LIMITED
IPP320N20N3 G
SAMSUN
10000
2.49
Shenzhen Taochip Electronic Co.,Ltd
IPP320N20N3 G
SANSUNG
10005
3.36
F-power Electronics Co