Samsung Semiconductor

Ref. [hkinsamsungsemiconductor20220920][hkinbrandcloudAMpd]

We spark the imagination of device manufacturers with top-of-the-line building blocks of the digital area, powering billions of devices, and through them, touching the lives of people around the world every day. Samsung promises cutting-edge components services, TCO solutions and technical services with the widest product portfolio in the industry and adds value through our flexibility to collaborate with customers and partners, leveraging resources throughout the product development process.

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Part Number IPP320N20N3 G
Main Category Discrete Semiconductor Products
Sub Category Transistors - FETs, MOSFETs - Single
Brand Samsung Semiconductor
Description MOSFET N-CH 200V 34A TO220-3
Series OptiMOS
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2350pF @ 100V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 136W (Tc)
Rds On (Max) @ Id, Vgs 32 mOhm @ 34A, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO-220-3
Package / Case TO-220-3
Image Discrete Semiconductor Products - Transistors
Lowest Price: $0.75   Highest Price: $4.23
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IPP320N20N3 G

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15000

Price (USD):

4.23

Company:

Hong Kong Borui Jintong Technology Co., Limited

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IPP320N20N3 G

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SAMSUMG

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5000

Price (USD):

0.75

Company:

Shenzhen Qiangneng Electronics Co., Ltd.

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IPP320N20N3 G

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SANSUMG

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2500

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1.62

Company:

ANT NEST ELECTRONIC CO., LIMITED

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IPP320N20N3 G

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SAMSUN

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10000

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2.49

Company:

Shenzhen Taochip Electronic Co.,Ltd

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Part Number:

IPP320N20N3 G

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SANSUNG

D/C:
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10005

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3.36

Company:

F-power Electronics Co

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