Part Number | IPW50R250CP |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Samsung Semiconductor |
Description | MOSFET N-CH 500V 13A TO-247 |
Series | CoolMOS |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 3.5V @ 520µA |
Gate Charge (Qg) (Max) @ Vgs | 36nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1420pF @ 100V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 114W (Tc) |
Rds On (Max) @ Id, Vgs | 250 mOhm @ 7.8A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO247-3 |
Package / Case | TO-247-3 |
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IPW50R250CP
SAMSUMG
4672
1.8
Useta Tech (HK) Limited
IPW50R250CP
SANSUMG
3893
2.5925
HK HEQING ELECTRONICS LIMITED
IPW50R250CP
SAMSUN
9879
3.385
Ysx Tech Co., Limited
IPW50R250CP
SANSUNG
2639
4.1775
SUNTOP SEMICONDUCTOR CO., LIMITED
IPW50R250CP
SANGSUNG
6439
4.97
STH Electronics Co.,Ltd