Part Number | IPW60R060C7XKSA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Samsung Semiconductor |
Description | MOSFET N-CH 600V 35A TO247 |
Series | CoolMOS,C7 |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 800µA |
Gate Charge (Qg) (Max) @ Vgs | 68nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2850pF @ 400V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 162W (Tc) |
Rds On (Max) @ Id, Vgs | 60 mOhm @ 15.9A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO247-3 |
Package / Case | TO-247-3 |
Image |
IPW60R060C7XKSA1
SAMSUMG
979
1.69
ASIAWAY (H.K.) LIMITED
IPW60R060C7XKSA1
SANSUMG
3000
2.415
Shenzhen guangyuan tengda technology co., LTD
IPW60R060C7XKSA1
SAMSUN
979
3.14
TLF ELECTRONICS LTD
IPW60R060C7XKSA1
SANSUNG
1000
3.865
MY Group (Asia) Limited
IPW60R060C7XKSA1
SANGSUNG
1100
4.59
Showtech International (HK) Co.,Limited