Part Number | IRF540 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Samsung Semiconductor |
Description | MOSFET N-CH 100V 28A TO-220AB |
Series | - |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 28A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 72nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1700pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 150W (Tc) |
Rds On (Max) @ Id, Vgs | 77 mOhm @ 17A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
Image |
IRF540
SAMSUMG
1
0.28
AMAX ELECTRONIC TECHNOLOGY PTE.LTD.
IRF540
SANSUMG
9000
1.345
Fairstock HK Limited
IRF540
SAMSUN
200000
2.41
Vast prospect electronic components
IRF540
SANSUNG
526
3.475
Pacific Corporation
IRF540
SANGSUNG
535
4.54
FLOWER GROUP(HK)CO.,LTD