Part Number | IRF624 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Samsung Semiconductor |
Description | MOSFET N-CH 250V 4.4A TO-220AB |
Series | - |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 250V |
Current - Continuous Drain (Id) @ 25°C | 4.4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 14nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 260pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 50W (Tc) |
Rds On (Max) @ Id, Vgs | 1.1 Ohm @ 2.6A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
Image |
IRF624
SAMSUMG
7310
0.83
Cicotex Electronics (HK) Limited
IRF624/ SiHF624
SANSUMG
6036
1.39
CIS Ltd (CHECK IC SOLUTION LIMITED)
IRF624
SAMSUN
2984
1.95
CIS Ltd (CHECK IC SOLUTION LIMITED)
IRF624
SANSUNG
4914
2.51
Gallop Great Holdings (Hong Kong) Limited
IRF624
SANGSUNG
5337
3.07
Semic Pte. Ltd