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Description
DESCRIPTION. Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low 12). c. ISD 30 A, dI/dt 200 A/ s, VDD VDS, TJ 175 C. d. 1.6 mm from case. e. Uses IRFZ34 , SiHFZ34 data and test conditions. PRODUCT SUMMARY. ISD 30 A, dI/dt 200 A/ s, VDD VDS, TJ 175 C. d. 1.6 mm from case. e. Uses IRFZ34 , SiHFZ34 data and test conditions. PRODUCT SUMMARY. VDS (V). Sep 1, 2010 DESCRIPTION. The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical Aug 25, 1997 Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per
| Part Number | IRFZ34 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Samsung Semiconductor |
| Description | MOSFET N-CH 60V 30A TO-220AB |
| Series | - |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 46nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200pF @ 25V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 88W (Tc) |
| Rds On (Max) @ Id, Vgs | 50 mOhm @ 18A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
| Image |  |
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