Part Number | IXBK55N300 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - IGBTs - Single |
Brand | Samsung Semiconductor |
Description | IGBT 3000V 130A 625W TO264 |
Series | BIMOSFET |
Packaging | - |
IGBT Type | Tube |
Voltage - Collector Emitter Breakdown (Max) | 3000V |
Current - Collector (Ic) (Max) | 130A |
Current - Collector Pulsed (Icm) | 600A |
Vce(on) (Max) @ Vge, Ic | 3.2V @ 15V, 55A |
Power - Max | 625W |
Switching Energy | - |
Input Type | Standard |
Gate Charge | 335nC |
Td (on/off) @ 25°C | - |
Test Condition | - |
Reverse Recovery Time (trr) | 1.9µs |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-264-3, TO-264AA |
Supplier Device Package | TO-264 |
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IXBK55N300
SAMSUMG
660
0.92
NOSIN (HK) ELECTRONICS CO., LIMITED
IXBK55N300
SANSUMG
5873
1.44
Dedicate Electronics (HK) Limited
IXBK55N300
SAMSUN
3000
1.96
HongKong Trusang Technology Co.,Ltd
IXBK55N300
SANSUNG
16000
2.48
Finestock Electronics HK Limited
IXBK55N300
SANGSUNG
6061
3
Belt (HK) Electronics Co