Samsung Semiconductor

Description

Aug 29, 2011 K4B2G0446D . K4B2G0846D. Rev. 1.13, May. 2011. SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND. SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed. May 30, 2014 6/28/2011. M393B1K70DH0-CMA. 8GB. 2Rx4. K4B2G0446D -HCMA. D. 2Gb. 128. IDT. 1866/1DPC. 9/2/2011. DDR3 Tested at 1866 DDR Rate 1.5V 1of1 DIMM/Channel Configuration. DIMM Module. DRAM Component. Testing Data. Micron. Micron. Samsung. Samsung. Elpida. Elpida. SK Hynix. SK Hynix. May 1, 2013 K4B2G0446D -HCH9. D. 2Gb. 1140. IDT. 2DPC. DIMM Module. DRAM Component. C32 Samsung. Samsung. BOLD = New Entry, * = Data Unavailable. LRDIMM 1333@1.35V. Test Info. Mfg. PN. Capacity Rank/Width. Mfg. PN. Rev IC Capacity IC Date Code Register. Config. Micron. MT72KSZS4G72LZ- Jan 16, 2015 Samsung K4B2G0446D -BYK0. 2Gb x4. 1349. IDT. A1. Samsung M393B1G70QH0-YK0. 8GB. 11. C. Samsung K4B4G0446Q-HYK0. 4Gb x4. 1328 . IDT. A1. Samsung M393B1G70DB0-YK0. 8GB. 11. C. Samsung K4B4G0446D- BYK0. 4Gb x4. 1349 Inphi. XV-GS02. Samsung M393B1K70QB0-YK0. 8GB. 11. Organization : 512M x 72. Composition : 512M x 4(st)* 18ea. Used component part # : K4B2G0446D -MCF7/MCF8/MCH9. # of rows in module : 2 Row. # of banks in component : 8 Banks. Feature : 18.75mm height & double sided component. Refresh : 8K/64ms. Bin Sort : F7(DDR3 800@CL=6), F8(DDR3 1066 @CL=7),