Description
3 - datasheet. K4B4G1646D . DDR3 SDRAM. Rev. 1.02. Table Of Contents. 4Gb D-die DDR3 SDRAM Olny x16. 1. Ordering Information . Nov 4, 2014 U39 to U43 DDR SDRAM Change to Samsung K4B4G1646D -BCK0. Page.28, 29. 8. Page.19. Change R25 1K to 470ohm for EMIFWAIT0 PU. Mar 31, 2016 K4B4G1646D -BYK0/MA. 96 Ball -FBGA. Lead Free & Halogen Free, Flip Chip 1600/1866. 7.5x13.3mm Now. 1G x 4. K4B4G0446E-BYK0/MA. Dec 1, 2012 Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar applications where product failure Dec 1, 2015 K4B4G0846D. BCH9/K0/MA. 512Mx8. K4B4G1646D . BCH9/K0/MA. 256Mx16. 96ball. FBGA. K4B4G0446D. BYH9/K0/MA. 1Gx4. 1.35V. 78 ball.
Part Number | K4B4G1646D |
Brand | Samsung Semiconductor |
Image |
K4B4G1646D
SAMSUMG
5000
1.83
XingSheng Technology (HK) Limited
K4B4G1646D
SANSUMG
1000
2.85
Ysx Tech Co., Limited
K4B4G1646D
SAMSUN
2000
3.87
S.E. Components
K4B4G1646D
SANSUNG
211000
4.89
CIS Ltd (CHECK IC SOLUTION LIMITED)
K4B4G1646D
SANGSUNG
7232
5.91
TERNARY UNION CO., LIMITED