Samsung Semiconductor

Description

1CH x32. K4e6e304eB -eGCe. 178-FBGA, 11x11.5 , QDP, 1066 MHz. 1.2V es. 2CH x32/ch. K3QF2F200A-XGCe. 253-FBGA, 11x11.5 , QDP, 1066 MHz. 1.2V es . 2CH x32/ch. K3QF2F200B-XGCe. 216-FBGA, 15x15 PoP , QDP, 1066 MHz 1.2 V. May 27, 2014 K4E6E304EB -EGCE. 16Gb. 4Gb. QDP x32. B. 1337. Samsung. K4E6E304ED- EGCF. 16Gb. 4Gb. QDP x32. D. 1334. Samsung. K4E6E304EE-EGCE. 16Gb. 4Gb. QDP x32. E. 1407. SK Hynix. H9CCNNN8JTMLAR-NTM. 8Gb. K4E6E304EB -EGCF. 178-FBGA, 11x11.5, DDP, 1866Mbps. 1.8V/1.2V/1.2V. Now . K4E6E304EB -AGCF. 168-FBGA, 12x12, DDP, 1866Mbps. 1.8V/1.2V/1.2V. Now. 2CH x 32. K3QF2F20BM-AGCF. 253-FBGA, 11x11.5, DDP, 1866Mbps. Nov 1, 2016 K4E6E304EB -EGCF. 16Gb. 8Gb. DDP x32. B. 1541. Samsung. K4EBE304EB- EGCF. 32Gb. 8Gb. QDP x32. B. 1543. Samsung. *K4E4E324EE-EGCF. 4Gb. 4Gb . SDP x32. E. 1440. Samsung. *K4E8E304EE-EGCF. 8Gb. 4Gb. MIC2026-1YM. Microchip Technology. Current Limit:0.5A. 16. M18. 1. USB2514B -AEZG. Microchip Technology. USB Hub 4port. 17. M19. 1. NL17SZ17XV5. ON Semiconductor. 18. M23. 1. K4E6E304EB -EGCF. Samsung Electronics. LPDDR3 .