Samsung Semiconductor

Description

May 27, 2014 K4E8E304ED- EGCF . 8Gb. 4Gb. DDP x32. D. 1331. Samsung. K4E8E304EE- EGCE. 8Gb. 4Gb. DDP x32. E. 1407. Samsung. K4E6E304EB -EGCE. 16Gb. 4Gb. QDP x32. B. 1337. Samsung. K4E6E304ED- EGCF . 16Gb. 4Gb. QDP x32. D. 1334. Samsung. K4E6E304EE-EGCE. 16Gb. 4Gb. QDP x32. E. 1407. Mar 31, 2016 K4E6E304EB - EGCF . 178-FBGA, 11x11.5, DDP, 1866Mbps. 1.8V/1.2V/1.2V. Now . K4E6E304EB-AGCF. 168-FBGA, 12x12, DDP, 1866Mbps. 1.8V/1.2V/1.2V. Now. 2CH x 32. K3QF2F20BM-AGCF. 253-FBGA, 11x11.5, DDP, 1866Mbps. 1.8V/1.2V /1.2V. Now. K3QF3F30BM-BGCF. 216-FBGA, 12x12, DDP, Micron. MT52L256M32D1PF-107 WT:B. 8Gb. 8Gb. SDP x32. B. 1536. Micron. MT52L512M32D2PF-107 WT:B. 16Gb. 8Gb. DDP x32. B. 1532. Micron. MT52L1G32D4PG-107 WT:B. 32Gb. 8Gb. QDP x32. B. 1533. Samsung. K4E8E324EB-EGCF. 8Gb. 8Gb. SDP x32. B. 1540. Samsung. K4E6E304EB - EGCF . 16Gb. 8Gb. DDP. K4E6E304EB - EGCF . Samsung Electronics. LPDDR3. 19. M25. 1. SN74AUP1G00DCKR. TEXAS INSTRUMENTS. NAND Gate. 20. M29. 1. N25Q128A11E1240E. Micron Technology. Serial Flash. 21. M1000. 1. KLMAG1JENB-B041. Samsung Electronics. eMMC 16GB. 22. Q1000,Q1001, Q1002,Q1003,. 5. TPS22924BYZT. 1CH x 32. K4E6E304EB - EGCF . 178-FBGA, 11x11.5, DDP, 1866Mbps. K4E6E304EB-AGCF. 168-FBGA, 12x12, DDP, 1866Mbps. 2CH x 32. K3QF2F20BM-AGCF. 253-FBGA, 11x11.5, DDP, 1866Mbps. K3QF3F30BM- FGCF. 256-FBGA, 14x14, DDP, 1866Mbps. 24Gb. 1CH x32. K4EHE304EA- AGCF. 168-FBGA, 12x12, QDP,