Samsung Semiconductor

Description

Mass. Production. 2Gb D-die. K4G20325FD . FC28/03/04. 64Mx32. POD_15. 16K /32ms 1.5V 0.045V. Mass. Production. 4Gb C-die. K4G41325FC. HC28/03/04. VDD = VDDQ = 1.6V/1.55V/1.5V 3% and 1.35V 3%. Data rate: 6.0 Gb/s, 7.0 Gb/s, 8.0 Gb/s. 16 internal banks. Four bank groups for tCCDL = 3 tCK. 1250/1500/1750. Now. K4G20325FD -FC(04/03). 170-FBGA. 1.35V/1.35V. 900/ 1050. Now. K4G20325FC-HC(05/04/03). 170-FBGA. 1.5V/1.5V. 1000/1250/1500. K4G20325FD -FC(04/03/*28). 170-FBGA. 1.5V/1.5V(*1.6V/1.6V). 5000/6000/* 7000. Now. *HC28 is 1.6V. K4G20325FD -FC(04/03). 170-FBGA. 1.35V/1.35V. 2Gb. 64Mx32. K4G20325FD -FC(04/03/28). 170-FBGA. 1.5V/1.5V. 1250/1500/ 1750. Now. K4G20325FD -FC(04/03). 170-FBGA. 1.35V/1.35V. 1000/1250. Now.