(4/5) based on 12 customer reviews
Description
Jul 18, 2011 2011 Samsung Electronics Co., Ltd. All rights reserved. datasheet. K4T51083QJ. K4T51163QJ . 512Mb J-die DDR2 SDRAM. 60 & 84FBGA with BC(L)E7/F7/E6. 128M x 4. SSTL_18. 8K/64m. 1.8V 0.1V. 60ball FBGA. Now. K4T51083QJ. BC(L)E7/F7/E6. 64M x 8. K4T51163QJ . BC(L)F8/E7/F7/E6. 32M x 16. K4t51163QJ -HC(e6/F7/e7/F8). 84-FBGA. 7.5x12.5mm. Lead free & Halogen free. 667/800/1066. Q3. 1Gb. 256M x4. K4t1G044QF-BC(e6/F7/e7). 60-FBGA. K4T51163QJ -HC(E6/F7/E7/F8). 84-FBGA. 7.5x12.5mm. Lead free & Halogen free. 667/800/1066. Q3. 1Gb. 256M x4. K4T1G044QF-BC(E6/F7/E7). 68-FBGA. 10 K4T51163QJ -BCE6000. 8542320021. 10,240. 0.9000 9,216.00. 512 Mb DDR2 MIS3H-X859253-001. Assembled in China from die of South Korea Qty:.
| Part Number | K4T51163QJ |
| Brand | Samsung Semiconductor |
| Image |  |
K4T51163QJ
SAMSUMG
464
1.6
H&T Electronics Co., Ltd
K4T51163QI-HCF7
SANSUMG
1000
2.4975
Shenzhen Chuangxinda Electronic-Tech Co.,Ltd
K4T51163QG-HCE6
SAMSUN
420
3.395
Pacific Corporation
K4T51163QI-HCE7
SANSUNG
863
4.2925
C&G Electronics (HK) Co., Ltd
K4T51163QG-HCF
SANGSUNG
150
5.19
Hengguang (HK) Electronics Trading Limited
