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Description
Samsung offers the industrys broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DraM, flash and SraM. Features. Organization: Page size: x8: 2,112 bytes (2,048 + 64 bytes) x16: 1,056 words (1,024 + 32 words). Block size: 64 pages (128K + 4K bytes). Device Macronix Part No. 1Gb. K9F1G08U0D. TSOP, FBGA. MX30LF1G18AC. 1Gb. K9F1G08U0E . TSOP, FBGA. MX30LF1G18AC. 2Gb. K9F2G08U0C. TSOP, FBGA . Oct 21, 2015 This application note details how to migrate designs from a Samsung K9F1G08U0D NAND flash memory device to a Cypress S34ML01G1 Mar 24, 2016 CP/100n/1608. ZR62. RS/4.75K/1608. Y5. XT/24M/SX-8. 1. 3. 2. 4. ZR78. RS/10K /1608. ZR178. RS/10K/1608. U18. IC/ K9F1G08U0E -SIB0.
| Part Number | K9F1G08U0E |
| Brand | Samsung Semiconductor |
| Image |  |
K9F1G08U0E
SAMSUMG
7250
0.52
Dedicate Electronics (HK) Limited
K9F1G08UOA-PCBO
SANSUMG
3000
1.6775
Yingxinyuan INT'L (Group) Limited
K9F1G08U0APCB0
SAMSUN
1920
2.835
Val Technologies, Inc
K9F1G08U0D-SCB0
SANSUNG
5000
3.9925
C&G Electronics (HK) Co., Ltd
K9F1G08UOD-SCBO
SANGSUNG
132
5.15
Hengguang (HK) Electronics Trading Limited
