(4/5) based on 12 customer reviews
Description
K9F4G08U0D -SCB0. TSOP1 HF & LF x8. 3.3. 960. 1000. C/S. K9F4G08U0D - SIB0. TSOP1 HF& LF. X8. 3.3. 960. 1000. C/S. K9F4G08U0B-PCB0. TSOP1 x8. 3.3. We have performed compatibility tests with several NAND flash devices that we could acquire from the market date-to-date using CY3686 EZ-USB NX2LP-Flex K9F4G08U0D -sCB0*. tsoP1 HF & LF x8. 3.3. MP. K9F4G08U0D -sIB0*. tsoP1 HF & LF, i-temp x8. 3.3. MP. 2Gb. 42nm sDR. K9F2G08U0C-sCB0*. tsoP-LF/HF x8. Nov 26, 2012 Part Number. Density. Gb). Pages Process RA8. RS2. K9F1G08U0D. 1. 64. 42n. . *. K9F2G08U0C. 2. 64. 42n. . *. K9F4G08U0D . 4. Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, SRAM products are found in
| Part Number | K9F4G08U0D |
| Brand | Samsung Semiconductor |
| Image |  |
K9F4G08U0D
SAMSUMG
1000
0.23
HK Rhoda Technology Co., Limited
K9F4G08U0D
SANSUMG
275
1.1275
YLH Electronics (H.K.) Co.,Limited
K9F4G08U0D
SAMSUN
11010
2.025
CIS Ltd (CHECK IC SOLUTION LIMITED)
K9F4G08U0E-SIB000/SAM
SANSUNG
2
2.9225
HZD GmbH
K9F4G08U0A-IIB0
SANGSUNG
1165
3.82
Yingxinyuan INT'L (Group) Limited
