Part Number | KSB601YTU |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single |
Brand | Samsung Semiconductor |
Description | TRANS PNP DARL 100V 5A TO-220 |
Series | - |
Packaging | Tube |
Transistor Type | PNP - Darlington |
Current - Collector (Ic) (Max) | 5A |
Voltage - Collector Emitter Breakdown (Max) | 100V |
Vce Saturation (Max) @ Ib, Ic | 1.5V @ 3mA, 3A |
Current - Collector Cutoff (Max) | 10µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 5000 @ 3A, 2V |
Power - Max | 1.5W |
Frequency - Transition | - |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Supplier Device Package | TO-220-3 |
Image |
KSB601YTU
SAMSUMG
9419
0.76
Shenzhen Chuangli Hengda Technology Co., Ltd
KSB601YTU
SANSUMG
6206
1.5625
HK CSY-ELECTRONICS CO., LIMITED
KSB601YTU
SAMSUN
2785
2.365
MY Group (Asia) Limited
KSB601YTU
SANSUNG
4583
3.1675
H.X.Y ELECTRONIC HK LIMITED
KSB601YTU
SANGSUNG
9114
3.97
HK TWO L ELECTRONIC LIMITED