Part Number | KSB772YSTSSTU |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single |
Brand | Samsung Semiconductor |
Description | TRANS PNP 30V 3A TO-126 |
Series | - |
Packaging | Tube |
Transistor Type | PNP |
Current - Collector (Ic) (Max) | 3A |
Voltage - Collector Emitter Breakdown (Max) | 30V |
Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 2A |
Current - Collector Cutoff (Max) | 1µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 1A, 2V |
Power - Max | 1W |
Frequency - Transition | 80MHz |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-225AA, TO-126-3 |
Supplier Device Package | TO-126-3 |
Image |
KSB772YSTSSTU
SAMSUMG
4876
1.23
MY Group (Asia) Limited
KSB772YSTSSTU
SANSUMG
8543
2.1325
MASSTOCK ELECTRONICS LIMITED
KSB772OS
SAMSUN
9852
3.035
Hongkong Rixin International Trading Company
KSB772Y
SANSUNG
552
3.9375
Pivot Technology Co., Ltd.
KSB772OS
SANGSUNG
9297
4.84
MY Group (Asia) Limited