Part Number | KSB811YTA |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single |
Brand | Samsung Semiconductor |
Description | TRANS PNP 25V 1A TO-92S |
Series | - |
Packaging | Tape & Box (TB) |
Transistor Type | PNP |
Current - Collector (Ic) (Max) | 1A |
Voltage - Collector Emitter Breakdown (Max) | 25V |
Vce Saturation (Max) @ Ib, Ic | 500mV @ 100mA, 1A |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 100mA, 1V |
Power - Max | 350mW |
Frequency - Transition | 110MHz |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 Short Body (Formed Leads) |
Supplier Device Package | TO-92S |
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KSB811YTA
SAMSUMG
5039
1.13
MY Group (Asia) Limited
KSB811YTA
SANSUMG
4186
1.5575
Dedicate Electronics (HK) Limited
KSB811GBU
SAMSUN
4822
1.985
MY Group (Asia) Limited
KSB811
SANSUNG
637
2.4125
Ande Electronics Co., Limited
KSB811
SANGSUNG
4555
2.84
Dedicate Electronics (HK) Limited