Part Number | KSC3503DS |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single |
Brand | Samsung Semiconductor |
Description | TRANS NPN 300V 0.1A TO-126 |
Series | - |
Packaging | Bulk |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 300V |
Vce Saturation (Max) @ Ib, Ic | 600mV @ 2mA, 20mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 10mA, 10V |
Power - Max | 7W |
Frequency - Transition | 150MHz |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-225AA, TO-126-3 |
Supplier Device Package | TO-126-3 |
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KSC3503DS
SAMSUMG
5500
0.35
HK HEQING ELECTRONICS LIMITED
KSC3503-D-S
SANSUMG
8575
0.8725
Dedicate Electronics (HK) Limited
KSC3503DS
SAMSUN
405
1.395
HongKong JDG Electronic Co., Limited
KSC3503DS
SANSUNG
8500
1.9175
CIS Ltd (CHECK IC SOLUTION LIMITED)
KSC3503DS
SANGSUNG
20000
2.44
Ande Electronics Co., Limited