Description
Jul 11, 2016 jolene.small@fairchildsemi.com. Material Declaration Processing Information. FSID. Material Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. KSD882YSTU . TO126-3 (Pb93.5Sn5Ag1.5). Jul 11, 2016 Email - Representative * jolene.small@fairchildsemi.com. Requester Item Number. Mfr Item Number. Mfr Item Name. Effective Date. FSC Version. Manufacturing Site. Weight*. UOM. Unit Type. KSD882YSTU . KSD882YSTU .
Part Number | KSD882YSTU |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single |
Brand | Samsung Semiconductor |
Description | TRANS NPN 30V 3A TO-126 |
Series | - |
Packaging | Tube |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 3A |
Voltage - Collector Emitter Breakdown (Max) | 30V |
Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 2A |
Current - Collector Cutoff (Max) | 1µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 1A, 2V |
Power - Max | 1W |
Frequency - Transition | 90MHz |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-225AA, TO-126-3 |
Supplier Device Package | TO-126-3 |
Image |
KSD882YSTU
SAMSUMG
1947
1.53
HK HEQING ELECTRONICS LIMITED
KSD882YSTU
SANSUMG
180
2.375
SUNTOP SEMICONDUCTOR CO., LIMITED
KSD882YSTU
SAMSUN
21000
3.22
CIS Ltd (CHECK IC SOLUTION LIMITED)
KSD882YSTU
SANSUNG
9000
4.065
SUMMER TECH(HK) LIMITED
KSD882YSTU
SANGSUNG
90
4.91
Yingxinyuan INT'L (Group) Limited