Description
Nov 15, 2013 M393B5170GB0 - CK0 . 4GB. 2Rx4 Samsung. K4B1G0446G-BCK0. G. 1Gb. 1107. IDT. RDDR3 Tested at 1066 DDR Rate 1.5V 3DIMM/Channel CK0 . D(1Rx8). 512M x 8 * 8 pcs. 4Gb. C-die. 8. 1. Now. M378B5173DB0. CK0 / MA. 512M x 8 * 8 pcs. 4Gb . M393B5170GB0 . CH9/K0/MA. E(2Rx4). 256M x 4 Nov 26, 2013 Samsung M393B1G70BH0-CK0. 8GB. 11. C. Samsung K4B4G0446B-HCK0. 4Gb x4. 1113 Inphi. UV-GS02. Samsung M393B5170GB0 - CK0 . Sep 2, 2011 CK0 . Clock Input, negative line. 1. DQ[63:0]. Data Input/Output. 64. CKE[1:0]. Clock Enables. 2. CB[7:0]. Data check bits Input/Output. 8. RAS. May 1, 2013 3DPC. MT18JSF51272PDZ-1G6M1FE. 4GB. 2Rx8. MT41K256M8DA-125:M M. 2Gb. 108. Inphi. 3DPC. Samsung. M393B5170GB0 - CK0 . 4GB.
Part Number | M393B5170GB0CK0 |
Brand | Samsung Semiconductor |
Image |
M393B5170GB0CK0
SAMSUMG
1949
0.84
Aking Limited
M393B5170EH1/FH0-CH9
SANSUMG
590
1.2475
Bossion International
M393B5170EH1-CH9
SAMSUN
60
1.655
KDH SEMICONDUCTOR CO., LIMITED
M393B5170EH1/FH0-CH9
SANSUNG
278
2.0625
SSF Group (Asia) Limited
M393B5170EH1-CH9
SANGSUNG
118
2.47
Yingxinyuan INT'L (Group) Limited