Description
IC DDR2 SDRAM 1GBIT 3NS 60FBGA Series: - Format - Memory: RAM Memory Type: DDR2 SDRAM Memory Size: 1G (128M x 8) Speed: 3ns Interface: Parallel Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0~C ~ 85~C Package / Case: 60-FBGA Supplier Device Package: 60-FBGA (8x11.5)
Part Number | MT47H128M8HQ-3:G TR |
Main Category | Integrated Circuits (ICs) |
Sub Category | Memory |
Brand | Samsung Semiconductor |
Description | IC SDRAM 1GBIT 333MHZ 60FBGA |
Series | - |
Packaging | |
Memory Type | Volatile |
Memory Format | DRAM |
Technology | SDRAM - DDR2 |
Memory Size | 1Gb (128M x 8) |
Clock Frequency | 333MHz |
Write Cycle Time - Word, Page | 15ns |
Access Time | 450ps |
Memory Interface | Parallel |
Voltage - Supply | 1.7 V ~ 1.9 V |
Operating Temperature | 0°C ~ 85°C (TC) |
Mounting Type | Surface Mount |
Package / Case | 60-FBGA |
Supplier Device Package | 60-FBGA (8x11.5) |
Image |
MT47H128M8HQ-3:G TR
SAMSUMG
500
1.65
HK HEQING ELECTRONICS LIMITED
MT47H128M8HQ-3:G
SANSUMG
45000
2.825
KST Components Limited
MT47H128M8HQ-3:G
SAMSUN
11300
4
CIS Ltd (CHECK IC SOLUTION LIMITED)
MT47H128M8HQ-3:G D9JVW
SANSUNG
11001
5.175
N&S Electronic Co., Limited
MT47H128M8HQ-3:G
SANGSUNG
2440
6.35
Nosin (HK) Electronics Co.