Part Number | MT47H256M4CF-25E:H |
Main Category | Integrated Circuits (ICs) |
Sub Category | Memory |
Brand | Samsung Semiconductor |
Description | IC SDRAM 1GBIT 400MHZ 60FBGA |
Series | - |
Packaging | Tape & Reel (TR) |
Memory Type | Volatile |
Memory Format | DRAM |
Technology | SDRAM - DDR2 |
Memory Size | 1Gb (256M x 4) |
Clock Frequency | 400MHz |
Write Cycle Time - Word, Page | 15ns |
Access Time | 400ps |
Memory Interface | Parallel |
Voltage - Supply | 1.7 V ~ 1.9 V |
Operating Temperature | 0°C ~ 85°C (TC) |
Mounting Type | Surface Mount |
Package / Case | 60-TFBGA |
Supplier Device Package | 60-FBGA (8x10) |
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MT47H256M4CF-25E:H
SAMSUMG
7185
0.49
Hong Kong Capital Industrial Co.,Ltd
MT47H256M4CF-25E:H
SANSUMG
376
1.135
HK HEQING ELECTRONICS LIMITED
MT47H256M4CF-25E:H
SAMSUN
8362
1.78
F-power Electronics Co
MT47H256M4CF-25E:H
SANSUNG
3785
2.425
HongKong JDG Electronic Co., Limited
MT47H256M4CF-25E:H
SANGSUNG
3311
3.07
Ande Electronics Co., Limited