Part Number | MT47H512M4THN-3:E TR |
Main Category | Integrated Circuits (ICs) |
Sub Category | Memory |
Brand | Samsung Semiconductor |
Description | IC SDRAM 2GBIT 333MHZ 63FBGA |
Series | - |
Packaging | Tape & Reel (TR) |
Memory Type | Volatile |
Memory Format | DRAM |
Technology | SDRAM - DDR2 |
Memory Size | 2Gb (512M x 4) |
Clock Frequency | 333MHz |
Write Cycle Time - Word, Page | 15ns |
Access Time | 450ps |
Memory Interface | Parallel |
Voltage - Supply | 1.7 V ~ 1.9 V |
Operating Temperature | 0°C ~ 85°C (TC) |
Mounting Type | Surface Mount |
Package / Case | 63-FBGA |
Supplier Device Package | 63-FBGA (9x11.5) |
Image |
MT47H512M4THN-3:E TR
SAMSUMG
164
1.44
Finestock Electronics HK Limited
MT47H512M4THN-3:E TR
SANSUMG
4424
2.085
Ande Electronics Co., Limited
MT47H512M4THN-3:E
SAMSUN
7666
2.73
N&S Electronic Co., Limited
MT47H512M4THN-3:E
SANSUNG
1231
3.375
N&S Electronic Co., Limited
MT47H512M4THN-3:E
SANGSUNG
5092
4.02
Innovation Best Electronics Technology Limited