Part Number | MUN2211JT1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | Samsung Semiconductor |
Description | TRANS PREBIAS NPN 2.7W SC59 |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 10k |
Resistor - Emitter Base (R2) (Ohms) | 10k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 230mW |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | SC-59 |
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MUN2211JT1
SAMSUMG
8000
0.69
MY Group (Asia) Limited
MUN2211JT1
SANSUMG
2547
1.2725
ONSTAR ELECTRONICS CO., LIMITED
MUN2211JT1
SAMSUN
35800
1.855
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
MUN2211JT1
SANSUNG
36000
2.4375
Showtech International (HK) Co.,Limited
MUN2211JT1
SANGSUNG
36000
3.02
Ysx Tech Co., Limited