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Description
Oct 1, 2012 High density NAND flash memories. Up to 256-Mbit memory array. Up to 32- Mbit spare area. Cost effective solutions for mass storage. 2011 6 8 NAND256W3A2BN6E . Table of Toxic and Hazardous Substances/Elements and their Content as required by Chinas Management Methods for Features. Organization: Page size: x8: 2,112 bytes (2,048 + 64 bytes) x16: 1,056 words (1,024 + 32 words). Block size: 64 pages (128K + 4K bytes). Device NAND256W3A2BN6E . 96. 576. . . NAND256W3A2BN6F. . . 1500. 32 x 16. NAND256W3A2BNXE. 96. 576. . . Table 5: NAND Flash Memory (continued).
| Part Number | NAND256W3A2BN6E |
| Main Category | Integrated Circuits (ICs) |
| Sub Category | Memory |
| Brand | Samsung Semiconductor |
| Description | IC FLASH 256MBIT 50NS 48TSOP |
| Series | - |
| Packaging | Tray |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NAND |
| Memory Size | 256Mb (32M x 8) |
| Clock Frequency | - |
| Write Cycle Time - Word, Page | 50ns |
| Access Time | 50ns |
| Memory Interface | Parallel |
| Voltage - Supply | 2.7 V ~ 3.6 V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 48-TFSOP (0.724", 18.40mm Width) |
| Supplier Device Package | 48-TSOP |
| Image |  |
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