Description
IC FLASH MEM 256MBIT PAGE 64BGA Series: GL-S Format - Memory: FLASH Memory Type: FLASH - NOR Memory Size: 256M (16M x 16) Speed: 110ns Interface: Parallel Voltage - Supply: 1.65 V ~ 3.6 V Operating Temperature: -40~C ~ 85~C Package / Case: * Supplier Device Package: *
Part Number | S29GL256S11FHIV10 |
Main Category | Integrated Circuits (ICs) |
Sub Category | Memory |
Brand | Samsung Semiconductor |
Description | IC FLASH 256MBIT 110NS 64BGA |
Series | GL-S |
Packaging | Tray |
Memory Type | Non-Volatile |
Memory Format | FLASH |
Technology | FLASH - NOR |
Memory Size | 256Mb (16M x 16) |
Clock Frequency | - |
Write Cycle Time - Word, Page | 60ns |
Access Time | 110ns |
Memory Interface | Parallel |
Voltage - Supply | 1.65 V ~ 3.6 V |
Operating Temperature | -40°C ~ 85°C (TA) |
Mounting Type | Surface Mount |
Package / Case | 64-LBGA |
Supplier Device Package | 64-Fortified BGA (13x11) |
Image |
S29GL256S11FHIV10
SAMSUMG
2000
1.2
HK HEQING ELECTRONICS LIMITED
S29GL256S11FHIV10
SANSUMG
5000
2.1775
Gallop Great Holdings (Hong Kong) Limited
S29GL256S11FHIV10
SAMSUN
10600
3.155
Hong Kong Capital Industrial Co.,Ltd
S29GL256S11FHIV10
SANSUNG
3000
4.1325
HONG KONG YUE JIN PENG ELECTRONICS CO.
S29GL256S11FHIV10
SANGSUNG
15000
5.11
HongKong JDG Electronic Co., Limited