(4/5) based on 8 customer reviews
Description
Datasheet Jun 2, 2008 SDT04S60 . thinQ! SiC Schottky Diode. Silicon Carbide Schottky Diode. Worlds first 600V Schottky diode. Revolutionary semiconductor. Oct 30, 2007 SDT04S60 . Diode. 1. D2. 1N5408. Diode. 1. D3. 1N4007. Diode. 1. F1. 5A. Fuse. 1. Fuse Holder. 2. IC1. ICE2PCS03. 1. JP1. 12.5mm, 0.7mm. CY1. 2.2nF, Y2, 250V. Ceramic Cap. Epcos / B81123C1222M000. CY2. 2.2nF, Y2, 250V. Ceramic Cap. Epcos / B81123C1222M000. Connector. D1. SDT04S60 . CX2. 0.47uF, X1, 275V. Ceramic Cap. 1. CY1. 2.2nF, Y2, 250V. Ceramic Cap. 1. CY2. 2.2nF, Y2, 250V. Ceramic Cap. 1. Connector. 3. D1. SDT04S60 . Diode. 1. Jun 17, 2005 SDT04S60 . Diode. 1. D2. 1N5408. Diode. 1. D3. 1N4007. Diode. 1. F1. 5A. Fuse. 1. Fuse Holder. 2. IC1. ICE1PCS02. 1. JP1. 12.5mm, 0.7mm.
| Part Number | SDT04S60 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Diodes - Rectifiers - Single |
| Brand | Samsung Semiconductor |
| Description | DIODE SCHOTTKY 600V 4A TO220-2 |
| Series | thinQ! |
| Packaging | Silicon Carbide Schottky |
| Diode Type | Tube |
| Voltage - DC Reverse (Vr) (Max) | 600V |
| Current - Average Rectified (Io) | 4A (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.9V @ 4A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0ns |
| Current - Reverse Leakage @ Vr | 200µA @ 600V |
| Capacitance @ Vr, F | 150pF @ 0V, 1MHz |
| Mounting Type | Through Hole |
| Package / Case | TO-220-2 |
| Supplier Device Package | PG-TO220-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Image |  |
SDT04S60
SAMSUMG
6000
0.73
HK HEQING ELECTRONICS LIMITED
SDT04S60
SANSUMG
6978
1.6675
ONSTAR ELECTRONICS CO., LIMITED
SDT04S60
SAMSUN
7867
2.605
Ande Electronics Co., Limited
SDT04S60
SANSUNG
11932
3.5425
Viassion Technology Co., Limited
SDT04S60
SANGSUNG
10807
4.48
CIS Ltd (CHECK IC SOLUTION LIMITED)
