Rated 
(5/5) based on 12 customer reviews
(5/5) based on 12 customer reviews
| Part Number | SI2306BDS-T1-GE3 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Samsung Semiconductor |
| Description | MOSFET N-CH 30V 3.16A SOT23-3 |
| Series | TrenchFET |
| Packaging | Tape & Reel (TR) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 3.16A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 4.5nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 305pF @ 15V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 750mW (Ta) |
| Rds On (Max) @ Id, Vgs | 47 mOhm @ 3.5A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Image |  |
Lowest Price: $0.27
Highest Price: $4.46
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SI2306BDST1GE3
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