Rated 
(5/5) based on 16 customer reviews
(5/5) based on 16 customer reviews
| Part Number | SI7232DN-T1-GE3 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Arrays |
| Brand | Samsung Semiconductor |
| Description | MOSFET 2N-CH 20V 25A PPAK 1212-8 |
| Series | TrenchFET |
| Packaging | Tape & Reel (TR) |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 25A |
| Rds On (Max) @ Id, Vgs | 16.4 mOhm @ 10A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 32nC @ 8V |
| Input Capacitance (Ciss) (Max) @ Vds | 1220pF @ 10V |
| Power - Max | 23W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK 1212-8 Dual |
| Supplier Device Package | PowerPAK 1212-8 Dual |
| Image |  |
Lowest Price: $0.41
Highest Price: $4.08
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SI7232DN-T1-GE3
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IC Chip Co., Ltd.
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SI7232DN-T1-GE3
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Splendent Technologies Pte Ltd
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SUNTOP SEMICONDUCTOR CO., LIMITED
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SI7232DNT1GE3 Ref.
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