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Description
Si8230AB -D- IS1 . VIA,VIB. High Side/ Si8233- B -IM. Si8233AB-D-IM . B . Semiconductor-. Based Isolation. Barrier. Transmitter. Receiver. Dead time control. Jul 14, 2014 Si8230AB - B - IS1 Si8230AB-D-IS1. Si8234AD-C-IS. Si8234AD-D-IS. Si8231AB-B- IS1 Si8231AB-D-IS1 Si8232AB-B-IS1 Si8232AB-D-IS1. 2.5 - 5.5. -40 to 125. WB SOIC16. Si8630AB- B - IS1 . 3 2.5 - 5.5. -40 to 125. WB SOIC16. Si8630BB- B - IS1 . 3 80. 12.5. 0.5. -40 to 125. SOIC8. Si8230AB - B -IS. EFM8BB21F16G-B-QFN20. 16 kB. 50. 2. 16. 5. 3. 2%. 12-bit, 15-ch. 2. 1. . 1. . 2 Si8230AB - B - IS1 . . . 2.5. 3500. 60. -40 to 125 C. 5 V. 0.5. NB SOIC16. Si8230AB -D- IS1 . VIA,VIB . B . Semiconductor-. Based Isolation. Barrier. Transmitter. Receiver. Dead time control. 0.5 to 4 .. A B .
| Part Number | SI8230ABBIS1 |
| Main Category | Isolators |
| Sub Category | Isolators - Gate Drivers |
| Brand | Samsung Semiconductor |
| Description | DGTL ISO 2.5KV GATE DRVR 16SOIC |
| Series | Automotive, AEC-Q100 |
| Packaging | Tube |
| Technology | Capacitive Coupling |
| Number of Channels | 2 |
| Voltage - Isolation | 2500Vrms |
| Common Mode Transient Immunity (Min) | 20kV/µs |
| Propagation Delay tpLH / tpHL (Max) | 60ns, 60ns |
| Pulse Width Distortion (Max) | 5.6ns |
| Rise / Fall Time (Typ) | 20ns, 20ns (Max) |
| Current - Output High, Low | 250mA, 500mA |
| Current - Peak Output | 500mA |
| Voltage - Forward (Vf) (Typ) | - |
| Current - DC Forward (If) (Max) | - |
| Voltage - Supply | 6.5 V ~ 24 V |
| Operating Temperature | -40°C ~ 125°C |
| Mounting Type | Surface Mount |
| Package / Case | 16-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 16-SOIC |
| Approvals | CQC, CSA, UR, VDE |
| Image |  |
SI8230AB-B-IS1
SAMSUMG
32500
0.47
Add Components Limited
SI8230AB-B-IS1
SANSUMG
480
1.3075
Charlott-Electronic
SI8230-A-IS
SAMSUN
732
2.145
Hong Kong In Fortune Electronics Co., Limited
SI8230-C
SANSUNG
6000
2.9825
TY International components Limited
SI8230-IS
SANGSUNG
1255
3.82
HK TWO L ELECTRONIC LIMITED
