Description
Power Supply Bypass Capacitors (Revision A and Revision B) . . . . . . . . . . . . . . . . 27. 3.2. Latch Up Supply Voltage (Revision B)3. VDD1 Si8461BA - B - IS1 . Si8460BA- B - IS1 . 6. 0. 150. 9.5. 1.0. 2.7 - 5.5 V. -40 to 125 C. NB SOIC16. Si8461AA- B - IS1 . 5. 1. 1. 35. 1.0. 2.7 - 5.5 V. -40 to 125 C. NB SOIC16. Si8461BA - B - Si8460BA- B - IS1 . 6. 0. 150. 9.5. 1.0. 2.7 - 5.5 V. -40 to 125 C. NB SOIC16. Si8461AA- B - IS1 . 5. 1. 1. 35. 1.0. 2.7 - 5.5 V. -40 to 125 C. NB SOIC16. Si8461BA - B - 22 B. 23 HYBRID ELECTRIC VEHICLE (HEV). 24 STEPPER MOTOR. 25 BRUSHED AND BRUSHLESS Si8461BA - B - IS1 . 5. 1. 150. . . Si8462AA-B- IS1. 4. Si8450AB-x- IS1 . Si8410BB-x-IS. Si8450BB-x- IS1 Si8461BA -x- IS1 . Si8462AA-x - IS1 Qualification Data: See Appendix A & B for Qualification Reports
Part Number | SI8461BABIS1 |
Main Category | Isolators |
Sub Category | Digital Isolators |
Brand | Samsung Semiconductor |
Description | DGTL ISO 1KV 6CH GEN PURP 16SOIC |
Series | - |
Packaging | Tube |
Technology | Capacitive Coupling |
Type | General Purpose |
Isolated Power | No |
Number of Channels | 6 |
Inputs - Side 1/Side 2 | 5/1 |
Channel Type | Unidirectional |
Voltage - Isolation | 1000Vrms |
Common Mode Transient Immunity (Min) | 25kV/µs (Typ) |
Data Rate | 150Mbps |
Propagation Delay tpLH / tpHL (Max) | 9.5ns, 9.5ns |
Pulse Width Distortion (Max) | 2.5ns |
Rise / Fall Time (Typ) | 3.8ns, 2.8ns |
Voltage - Supply | 2.7 V ~ 5.5 V |
Operating Temperature | -40°C ~ 125°C |
Package / Case | 16-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 16-SOIC |
Image |
Si8461BA-B-IS1
SAMSUMG
31812
1.78
HongKong Wanghua Technology Limited
SI8461DB
SANSUMG
33000
2.505
Hong Kong In Fortune Electronics Co., Limited
SI8461BB-B-IS1
SAMSUN
1001
3.23
Bonase Electronics (HK) Co., Limited
SI8461DB-T2-E1
SANSUNG
18000
3.955
MY Group (Asia) Limited
SI8461DB-T2-E1
SANGSUNG
5000
4.68
Acon Electronics Limited