Part Number | SS9012GTA |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single |
Brand | Samsung Semiconductor |
Description | TRANS PNP 20V 0.5A TO-92 |
Series | - |
Packaging | Cut Tape (CT) |
Transistor Type | PNP |
Current - Collector (Ic) (Max) | 500mA |
Voltage - Collector Emitter Breakdown (Max) | 20V |
Vce Saturation (Max) @ Ib, Ic | 600mV @ 50mA, 500mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 112 @ 50mA, 1V |
Power - Max | 625mW |
Frequency - Transition | - |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package | TO-92-3 |
Image |
SS9012GTA
SAMSUMG
8000
0.46
MY Group (Asia) Limited
SS9012GTA
SANSUMG
18000
1.3725
MASSTOCK ELECTRONICS LIMITED
SS9012GTA
SAMSUN
38000
2.285
Hongkong K.L.N Electronic Technology Co., Ltd.
SS9012GTA
SANSUNG
2100
3.1975
Antony Electronic Ltd.
SS9012H
SANGSUNG
1350
4.11
HK TWO L ELECTRONIC LIMITED