Part Number | SSD2009ATF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | Samsung Semiconductor |
Description | MOSFET 2N-CH 50V 3A 8-SOIC |
Series | - |
Packaging | Tube |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 50V |
Current - Continuous Drain (Id) @ 25°C | 3A |
Rds On (Max) @ Id, Vgs | 130 mOhm @ 3A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Power - Max | 2W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 8-SOP |
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SSD2009ATF
SAMSUMG
7256
0.85
HK HEQING ELECTRONICS LIMITED
SSD2009ATF
SANSUMG
629
1.575
Gallop Great Holdings (Hong Kong) Limited
SSD2009ATF
SAMSUN
6213
2.3
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
SSD2009ATF.
SANSUNG
4510
3.025
N&S Electronic Co., Limited
SSD2009ATF
SANGSUNG
8407
3.75
NEW IDEAS INDUSTRIAL CO., LIMITED