Part Number | TK8A60DA |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Samsung Semiconductor |
Description | MOSFET N-CH 600V 7.5A TO-220SIS |
Series | 蟺-MOSVII |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 7.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1050pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 45W (Tc) |
Rds On (Max) @ Id, Vgs | 1 Ohm @ 4A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220SIS |
Package / Case | TO-220-3 Full Pack |
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TK8A60DA
SAMSUMG
22702
1.81
Hongkong Dasenic Electronic Limited
TK8A60DA
SANSUMG
10000
2.73
Hong Kong Capital Industrial Co.,Ltd
TK8A60DA
SAMSUN
300
3.65
Gallop Great Holdings (Hong Kong) Limited
TK8A60DA(STA4,X,S)
SANSUNG
16000
4.57
CIS Ltd (CHECK IC SOLUTION LIMITED)
TK8A60DA
SANGSUNG
381
5.49
Yingxinyuan INT'L (Group) Limited